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Larger-than-Vdd forward body bias in sub-0.5V nanoscale CMOS

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3 Author(s)
Ananthan, H. ; Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Kim, C.H. ; Roy, K.

This paper examines the effectiveness of larger-than-Vdd forward body bias (FBB) in nanoscale bulk CMOS circuits where Vdd is expected to scale below 0.5V. Equal-to and larger-than Vdd FBB schemes offer unique advantages over conventional FBB such as simple design overhead and reverse body bias capability respectively. Compared to zero body bias, they improve process-variation immunity and achieve 71% and 78% standby leakage savings at iso performance and iso active power at room temperature. We also suggest a novel temperature-adaptive body bias scheme to control active leakage and achieve 22% and 40% active power savings at higher temperatures.

Published in:

Low Power Electronics and Design, 2004. ISLPED '04. Proceedings of the 2004 International Symposium on

Date of Conference:

9-11 Aug. 2004

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