By Topic

Analysis of loss and junction temperature in power semiconductors of the matrix converter using simple simulation methods

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Odaka, A. ; Electron. Technol. Laboratory, Fuji Electr. Adv. Technol. Co., Ltd., Tokyo, Japan ; Itoh, J.-I. ; Sato, I. ; Ohguchi, H.
more authors

In this paper, simple simulation methods to calculate power semiconductor loss and instantaneous junction - case temperature difference in a power module of a matrix converter are proposed. The validity of the proposed simulation method for loss calculation is confirmed through experiment using a 22 kW test set-up of the matrix converter. By using the simulation method for temperature calculating, the influence of the output frequency on the junction - case temperature difference is investigated. Moreover, the effect of using a novel IGBT (RB-IGBT) that has reverse blocking capability is discussed. It is shown that the efficiency of a matrix converter using the RB-IGBT is higher by 1.3 points than that of a conventional PWM rectifier and inverter system.

Published in:

Industry Applications Conference, 2004. 39th IAS Annual Meeting. Conference Record of the 2004 IEEE  (Volume:2 )

Date of Conference:

3-7 Oct. 2004