Referenced Items are not available for this document.
Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The fabricated power HEMT realized a high breakdown voltage with a field plate structure and a low on-state resistance of 3.9 mΩ·cm2, which is 10 × lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.
Published in:
Electron Devices, IEEE Transactions on
(Volume:51
,
Issue:
11
)
Date of Publication: Nov. 2004
- Page(s):
- 1913 - 1917
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 8237287
- Digital Object Identifier :
- 10.1109/TED.2004.836799
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 October 2004
- Issue Date :
- Nov. 2004
- Sponsored by :
- IEEE Electron Devices Society
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