By Topic

A dual-band CMOS front-end with two gain modes for wireless LAN applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zhenbiao Li ; Silicon Microwave Integrated Circuits & Syst. Res. Group, Univ. of Florida, Gainesville, FL, USA ; Quintal, R. ; O, K.K.

A dual-band front-end with two gain modes operating at the 2.4 Industrial Scientific and Medical (ISM) band and 5.15-GHz Unlicensed National Information Infrastructure (UNII) band has been demonstrated in a 0.18-μm foundry CMOS process. The front-end uses a single set of RF blocks. A dual-band low noise amplifier (LNA) with two inputs is tuned to the two resonant frequencies by controlling the voltage on a switched resonator. The same switched resonator is also used to switch the LNA between high-gain and low-gain modes. In the 2.4-GHz high-gain mode, the front-end exhibits 39.8-dB maximum voltage gain, 1.5-dB double-side-band (DSB) noise figure, and -12.7-dBm input-referred IP3 (IIP3) while consuming 24 mW from a 1.8-V supply. In the 5.15-GHz high-gain mode, the front-end achieves 29.2-dB maximum voltage gain, 4.1-dB DSB noise figure and -4.1-dBm IIP3 with 41-mW power consumption. The gains can be switched by 7 dB at 5.15 GHz and by 17 dB at 2.4 GHz.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:39 ,  Issue: 11 )