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Low-power 5 GHz LNA and VCO in 90 nm RF CMOS

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12 Author(s)
Linten, D. ; Interuniv. Microelectron. Center, Leuven, Belgium ; Aspemyr, L. ; Jeamsaksiri, W. ; Ramos, J.
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The potential of 90 nm CMOS technology for low-power RF front-ends is demonstrated with fully integrated low-voltage Low-Noise Amplifiers (LNA) and Voltage-Controlled Oscillators (VCO). The 5.5 GHz LNA draws 3.5 mA from a 0.6 V supply with a measured power gain of 11.2 dB, and a 3.2 dB noise figure. The 6.3 GHz VCO has a phase noise of -118 dBc/Hz at 1 MHz offset, drawing 4.9 mA from a 1.2 V supply.

Published in:

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

17-19 June 2004