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A 15-GHz integrated CMOS switch with 21.5-dBm IP1dB and 1.8-dB insertion loss

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2 Author(s)
Zhenbiao Li ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA ; O, K.K.

A 15-GHz CMOS switch was fully integrated in a 0.13-μm CMOS foundry process. With on-chip LC impedance transformation networks (ITNs), the switch achieves 21.5-dBm input P1dB and 34.5-dBm input IP3. The insertion loss and isolation are 1.8 dB and 17.8 dB. The degradation of insertion loss due to use of ITNs is made negligible by reducing the degradation of insertion loss due to the bond pad capacitances in the switch without ITNs. This is the first CMOS switch operating at 15 GHz with competitive performance as GaAs switches, and requires 3V/1.2V control voltages.

Published in:

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

17-19 June 2004

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