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2T1D memory cell with voltage gain

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2 Author(s)
Luk, W.K. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Dennard, R.H.

A 2T1D dynamic memory cell with two transistors (T) and a gated diode (D) is presented. The gated diode acts as a nonlinear capacitance which amplifies the internal stored voltage in a read operation, leading to high performance, higher S/N ratio, and low voltage operation. Details about the gated diode structure, its principle of operations, the memory cell circuits and the array structure are presented, followed by hardware results.

Published in:

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

17-19 June 2004

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