Cart (Loading....) | Create Account
Close category search window
 

Self-boosted charge injection for 90-nm-node 4-Gb multilevel AG-AND flash memories programmable at 16 MB/s

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Kurata, H. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Otsuga, K. ; Sasago, Y. ; Arigane, T.
more authors

This paper presents a high-speed multilevel programming scheme for 90-nm node AG-AND flash memories. Source-side hot-electron injection programming with self-boosted charge, accumulated in inversion-layer local bit-lines under AGs, reduces the dispersal of programming characteristics and also reduces the time overhead of pre-charging the bit-lines. With this self-boosted charge injection scheme, programming at a fast 16 MB/s is obtainable in 4-Gb flash memory with an actual cell size of 2F2/bit.

Published in:

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

17-19 June 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.