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Self-boosted charge injection for 90-nm-node 4-Gb multilevel AG-AND flash memories programmable at 16 MB/s

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13 Author(s)
Kurata, H. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Otsuga, K. ; Sasago, Y. ; Arigane, T.
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This paper presents a high-speed multilevel programming scheme for 90-nm node AG-AND flash memories. Source-side hot-electron injection programming with self-boosted charge, accumulated in inversion-layer local bit-lines under AGs, reduces the dispersal of programming characteristics and also reduces the time overhead of pre-charging the bit-lines. With this self-boosted charge injection scheme, programming at a fast 16 MB/s is obtainable in 4-Gb flash memory with an actual cell size of 2F2/bit.

Published in:

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

17-19 June 2004