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Low damage via formation with low resistance by NH3 thermal reduction for Cu/ultra low-k interconnects

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2 Author(s)
Okamura, Hiroshi ; Dept. of Res., Semicond. Leading Edge Technol. Inc., Ibaraki, Japan ; Ogawa, S.

In order to minimize plasma-damage on porous low-k films, a pre-clean treatment, NH3 thermal reduction, to remove CuOx thin layer from a via bottom before barrier metal deposition was investigated. A reduction rate of 3 nm/min for CuOx layer was obtained at 360 C degrees, and via resistance was reduced to 75% without any damage into porous low-k films such as increase of dielectric constant (k) and decrease in low-k film thickness, while conventional Ar or He/H2 plasma pre-clean treatments in severe damages into low-k-films.

Published in:

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Date of Conference:

7-9 June 2004