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Effect of current crowding on copper dual damascene via bottom failure for ULSI applications

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6 Author(s)
Arijit, R. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Tan, C.M. ; Anand, V.V. ; Ahila, K.
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Reliability issues are becoming more important in interconnect via. Electromigration experiments are performed on line/via structures in a two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Semi-classical width dependence Black's equation together with finite element analysis revealed that the difference in the time to failure is due to the much larger average current density along the heterogeneous interface for the wide line/via structure, and good agreement is obtained between the simulation and experimental results.

Published in:
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the

Date of Conference: 5-8 July 2004

Page(s):
173 - 176
Print ISBN:
0-7803-8454-7
INSPEC Accession Number:
8118759
Digital Object Identifier :
10.1109/IPFA.2004.1345582
Product Type:
Conference Publications

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