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Browse Conference Publications > VLSI Technology, 2004. Digest ... Help

Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

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5 Author(s)
Kinoshita, A. ; Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan ; Tsuchiya, Y. ; Yagishita, A. ; Uchida, K.
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A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity compared to the conventional MOSFET. In conclusion the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.

Published in:
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference: 15-17 June 2004

Page(s):
168 - 169
Print ISBN:
0-7803-8289-7
INSPEC Accession Number:
8058245
Digital Object Identifier :
10.1109/VLSIT.2004.1345459
Product Type:
Conference Publications

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