Skip to Main Content
A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi2 process show competitive drive current and better short-channel-effect immunity compared to the conventional MOSFET. In conclusion the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.