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Physics in Fermi level pinning at the polySi/Hf-based high-k oxide interface

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9 Author(s)
Shiraishi, K. ; Inst. of Phys., Univ. of Tsukuba, Japan ; Yamada, K. ; Torii, K. ; Akasaka, Y.
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We report that O vacancy (Vo) formation in ionic Hf-based dielectrics and subsequent electron transfer into poly Si gates across the interface, definitely cause substantial flat band (Vfb) shifts especially for p+ gate MISFETs. Our theory can systematically reproduce experiments related to Hf-based dielectrics, and gives a guiding principle towards gate/high-k oxide interface control.

Published in:

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

15-17 June 2004

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