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Integration of a 90nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA

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10 Author(s)
Jeamsaksiri, W. ; Interuniv. Microelectron. Center, Leuven, Belgium ; Mercha, A. ; Ramos, J. ; Linten, D.
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The potential for low power RF systems on chip of a 90nm CMOS technology is demonstrated for the first time on a monolithic 5GHz low noise amplifier. This technology combines a portfolio of high Q passive components with high RF performances 70nm physical gate length NMOSFETs (200GHz fmax -150GHz fT) presenting a ratio power gain/current gain higher than 1 up to the maximum measurement frequency.

Published in:

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

15-17 June 2004

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