The potential for low power RF systems on chip of a 90nm CMOS technology is demonstrated for the first time on a monolithic 5GHz low noise amplifier. This technology combines a portfolio of high Q passive components with high RF performances 70nm physical gate length NMOSFETs (200GHz fmax -150GHz fT) presenting a ratio power gain/current gain higher than 1 up to the maximum measurement frequency.
Published in:
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Date of Conference: 15-17 June 2004