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A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability

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8 Author(s)
Zamdmer, N. ; Dev. Center, IBM Semicond. Res., Hopewell Junction, NY, USA ; Jonghae Kim ; Trzcinski, R. ; Plouchart, J.-O.
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SOI CMOS technology offers low parasitic junction capacitance, and therefore provides speed and power enhancements to digital applications compared to bulk CMOS. It is also emerging as a good candidate for high-performance SoC, with integratable RF circuits that operate beyond 30-GHz already demonstrated at the 130-nm technology node. The digital aspects of the base 90-nm SOI technology were previously reported. This paper presents the RF performance of this technology, and shows that the capabilities of CMOS technology are expanding into the millimeter-wave regime.

Published in:

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

15-17 June 2004

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