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Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back technique

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8 Author(s)
Aberg, I. ; Microsystems Technol. Lab., MIT, Cambridge, MA, USA ; Olubuyide, O.O. ; Ni Chleirigh, C. ; Lauer, I.
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Electron and hole mobility enhancements are studied in Ge-free strained silicon directly on insulator fabricated by a bond and etch-back technique, for the first time. For inversion charge densities of 1013 cm-2, electron and hole mobility enhancements of 100% (n-MOSFET, 30% effective Ge content, 15 nm-thick) and 50% (p-MOSFET, 40% effective Ge, 6 nm-thick), respectively are measured in fully depleted strained Si. For a biaxial strain level of 1.25% (30% effective Ge), hole mobility is the same for body thicknesses of 25 and 13 nm, and drops by no more than 5% for a body thickness of 8.5 nm. There is no evidence of strain relaxation, despite a generous thermal budget.

Published in:

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Date of Conference:

15-17 June 2004