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Numerical analysis of effects of incident light intensities on extinction ratio and α parameter of InGaAsP-InP multi-quantum-well modulator

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5 Author(s)
Nomura, Yoshinori ; Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan ; Akiyama, Koichi ; Tomita, Nobuyuki ; Nishimura, Tetsuya
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This work presents the modeling of multi-quantum well (MQW) electroabsorption modulators (EAMs), in which photo-induced currents are implemented, and demonstrated. The performance of MQW EAMs is simulated when the incident light is highly intensive. Dependencies of EAM performance on the QW structure are also discussed.

Published in:

Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on

Date of Conference:

24-26 Aug. 2004