Referenced Items are not available for this document.
A good deal of consideration is needed in designing the growth masks to get the intended bandgap profile due to a complex interplay of chemical reactions and physical effects such as gas phase diffusion and surface migration. This work presents a simulation tool for selective area growth metal-organic vapor epitaxy (SAG-MOVPE) of InGaAsP-based photonic integrated circuits.
Published in:
Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on
Date of Conference: 24-26 Aug. 2004
- Page(s):
- 25 - 26
- Print ISBN:
- 0-7803-8530-6
- INSPEC Accession Number:
- 8230652
- Digital Object Identifier :
- 10.1109/NUSOD.2004.1345127
- Product Type:
- Conference Publications
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