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Simulation of bandgap in MOVPE selective area growth of InGaAsP-based photonic integrated circuits

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7 Author(s)
Al Amin, A. ; Dept. of Electron. Eng., Tokyo Univ., Japan ; Doi, T. ; Sakurai, K. ; Zhenrui Zhang
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A good deal of consideration is needed in designing the growth masks to get the intended bandgap profile due to a complex interplay of chemical reactions and physical effects such as gas phase diffusion and surface migration. This work presents a simulation tool for selective area growth metal-organic vapor epitaxy (SAG-MOVPE) of InGaAsP-based photonic integrated circuits.

Published in:

Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on

Date of Conference:

24-26 Aug. 2004