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Low-energy neutron sensitivity of recent generation SRAMs

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3 Author(s)
J. M. Armani ; Commissariat a l'Energie Atomique, Gif sur Yvette, France ; G. Simon ; P. Poirot

This experimental study investigated the sensitivity of 0.22 to 0.13 μm CMOS-based SRAMs to single-event upsets (SEUs) induced by thermal and fission neutrons (energies below 6 MeV). Results showed that both supply voltage and type of component model can have significant impact.

Published in:

IEEE Transactions on Nuclear Science  (Volume:51 ,  Issue: 5 )