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Simple, physics-based MOSFET noise models, valid over the linear, saturation, and subthreshold operation regions are presented. The consistency of the models representing series-parallel associations of transistors is verified. Simple formulas for hand analysis using the inversion level concept are developed. The proportionality between the flicker noise corner frequency and the transistor transition frequency is proved and experimentally verified under wide bias conditions. Application of the noise models to a low-noise design is shown.