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High-speed Germanium-on-SOI lateral PIN photodiodes

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6 Author(s)
Dehlinger, G. ; Infineon Technologie, Villach, Austria ; Koester, S.J. ; Schaub, J.D. ; Chu, J.O.
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We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 ×10-μm detectors with finger spacing S of 0.4 μm (0.6 μm) produced a -3-dB bandwidth of 29 GHz (27 GHz) at a bias voltage of -1 V. The detectors with S=0.6 μm had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 μA at -1-V bias.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 11 )

Date of Publication:

Nov. 2004

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