By Topic

DC-Voltage-induced thermal shift of bias point in LiNbO3 optical Modulators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Nagata, Hirotoshi ; JDS Uniphase Corp., Bloomfield, CT, USA ; O'Brien, N.F. ; Bosenberg, W.R. ; Reiff, G.L.
more authors

Increasing thermal shift of a bias point is observed when dc voltage is applied to z-cut LiNbO3 (LN) modulators having asymmetric design; whereas, stable thermal shift is observed in symmetric x-cut LN modulators. A growth of the thermal shift depends upon the amplitude, polarity, and duration of the applied voltage and constitutes a new criterion to reliability modeling of LN modulators.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 11 )