By Topic

Improvement in heat dissipation by transfer of IV-VI epilayers from silicon to copper

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Li, Y.F. ; Sch. of Electr. & Comput. Eng., Univ. of Oklahoma, Norman, OK, USA ; McCann, P.J. ; Sow, A. ; Yao, C.
more authors

A successful metallization (Au-InSn alloy) bonding and substrate removal procedure is described for improving epilayer heat dissipation. Two IV-VI semiconductor multiple quantum well (MQW) structures grown on silicon host substrates by molecular beam epitaxy with a CaF2 (or CaF2-BaF2) buffer layer were bonded epilayer down to the tips of a copper bar assembly and then the Si substrates were removed by dissolving the CaF2 (or CaF2-BaF2) buffer layer in water. The bonded IV-VI epilayers were cleaved by separation of the copper bars. Photoluminescence (PL) data before and after transfer showed that an increase in diode laser pumping caused a smaller blue shift in the PL energies for the structures bonded to copper when compared to the as-grown samples. Calculations revealed that epilayers transferred to copper were at least 20°C cooler than the same epilayers on silicon when illuminated with a continuous wave (λ=911 nm) laser at a power density of about 25 W/cm2.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 11 )