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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:16 Issue:11 Help

Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime

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4 Author(s)
Salhi, A. ; CEM2, Univ. Montpellier II, France ; Rouillard, Y. ; Angellier, J. ; Garcia, M.

A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm-1 and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm2. The threshold current density per quantum well is as low as 34 A/cm2 for a 3-mm-long cavity.

Published in:
Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 11 )

Date of Publication: Nov. 2004

Page(s):
2424 - 2426
ISSN :
1041-1135
INSPEC Accession Number:
8218791
Digital Object Identifier :
10.1109/LPT.2004.835623
Product Type:
Journals & Magazines
Date of Current Version :
18 October 2004
Issue Date :
Nov. 2004
Sponsored by :
IEEE Photonics Society

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