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High-power angled broad-area 1.3-μm laser diodes with good beam quality

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5 Author(s)
Chih-Hung Tsai ; Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan ; Su, Yi-Shin ; Chia-Wei Tsai ; Tsai, D.P.
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A new type of high-power laser diodes is fabricated with a broad-area waveguide tilted at 7° from the facet normal. For the current between 0.6 and 1.2 A, it behaves like a superluminescent diode with 40-nm spectral width and 40-mW output power. The far field emits at about 25° away from the facet normal. For the current above 1.2 A, it oscillates with a narrow spectrum. The far field emits along the facet normal with its angle only twice of the diffraction limit. The output power per facet could be 1 W at 12 A.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 11 )