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We have demonstrated high-performance InGaAsN triple-quantum-well ridge waveguide (RWG) lasers fabricated using pulsed anodic oxidation. The lowest threshold current density of 675 A/cm2 was obtained from a P-side-down bonded InGaAsN laser, with cavity length of 1600 μm and contact ridge width of 10 μm. The emission wavelength is 1295.1 nm. The transparency current density from a batch of unbonded InGaAsN RWG lasers was 397 A/cm2 (equivalent to 132 A/cm2 per well). High characteristic temperature of 138 K was also achieved from the bonded 10×1600-μm2 InGaAsN laser.