Skip to Main Content
InAlN/GaN based HFETs are demonstrated, which allow us to engineer polarisation induced charges. The InxAl1-xN/GaN heterostructures were grown with x=0.04 to x=0.15. Measured 2DEG Hall mobility was 480 and 750 cm2/Vs at 300K and 10K, respectively, and carrier concentration reached 4×1013 cm-2 at room temperature. The threshold voltage and peak transconductance shifted towards positive gate values, as well as a decrease in the drain current with In content increase. This change originates from polarisation difference reduction between GaN and InAlN. The 0.7 μm gate device had ft and fmax of 11 and 13 GHz, respectively.