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Solution of Schrödinger equation in double-gate MOSFETs using transfer matrix method

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4 Author(s)
Abdolkader, T.M. ; Dept. of Basic Sci., Benha Higher Inst. of Technol., Egypt ; Hassan, H.H. ; Fikry, W. ; Omar, O.A.

The transfer matrix method (TMM) has been extensively used to investigate quantum-mechanical tunnelling through potential barriers. Reported is the application of TMM, for the first time, to solve the Schrödinger equation in double-gate MOSFETs. The method is shown to be more accurate than the conventional finite difference method, especially for high energy levels.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 20 )