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High-power InGaN light emitting diodes grown by molecular beam epitaxy

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6 Author(s)
Johnson, K. ; Sharp Labs. of Eur. Ltd., Oxford, UK ; Bousquet, V. ; Hooper, S.E. ; Kauer, M.
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The highest power InGaN light emitting diodes produced by molecular beam epitaxy are reported. When operated in continuous-wave mode at room temperature, the optical output power of the devices was 3.75 mW at a forward injection current of 20 mA, and the maximum output power was 14.3 mW. The electroluminescence had a peak at 405 nm and a full width half maximum of 15 nm. The electrical characteristics showed a voltage of 4.8 V and a resistance of 31 Ω at a forward injection current of 20 mA.

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Electronics Letters  (Volume:40 ,  Issue: 20 )