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Low-temperature growth (400°C) of high-integrity thin silicon-oxynitride films by microwave-excited high-density Kr-O2-NH3 plasma

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6 Author(s)
K. Ohtsubo ; Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan ; Y. Saito ; M. Hirayama ; S. Sugawa
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A drastic reduction of the growth temperature of oxynitride (SiON) films, which are usually grown around 1000°C, is realized by using a microwave-excited high-density Kr-O2-NH3 plasma system, which enables their growth at 400°C. It is shown that the addition of only a minute amount of nitrogen (0.5% NH3 partial pressure) into a growing SiO2 film, in this system, results in a significant improvements in the performance of both thick (7nm) films, which operate in the Fowler-Nordheim tunneling regime, and thin (3 nm) films which operate in the direct tunneling regime.

Published in:

IEEE Transactions on Plasma Science  (Volume:32 ,  Issue: 4 )