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Electroplated metal microstructures embedded in fusion-bonded silicon: conductors and magnetic materials

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5 Author(s)
Arnold, D.P. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Cros, F. ; Zana, Iulica ; Veazie, D.R.
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Fabrication methods for integrating thick (tens or hundreds of micrometers) electroplated metallic microstructures inside fusion-bonded silicon wafers are proposed and validated. Cu and Ni80Fe20 (permalloy) test structures were embedded inside of cavities in silicon wafers, which were fusion-bonded at 500°C for 4h with nearly 100% yield. Resistance tests validated the electrical integrity of the metals after annealing, and magnetic measurements indicated the Ni-Fe maintained its magnetic performance after annealing. Additional mechanical tests verified a strong, uniform bond, and that the presence of the metals does not degrade the bond strength. These results demonstrate the ability to integrate conductive and magnetic materials in wafer-bonded silicon, a method useful for a variety of multiwafer, MEMS devices.

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Microelectromechanical Systems, Journal of  (Volume:13 ,  Issue: 5 )