Cart (Loading....) | Create Account
Close category search window
 

Pressure dependence of the electrical potential and electron temperature in a microwave-generated plasma

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ismail, L.Z. ; Lab. of Laser Phys. & Applications, Cairo Univ., Giza, Egypt ; El-Magd, A.A.

The electron temperature in a stationary hydrogen plasma has been studied using a Langmuir probe. The measurements have been carried out over the pressure range from 3 mbar (2.25 torr) to 25 mbar (18.75 torr). The applied microwave power was varied from 50 to 450 W. The electron temperature shows a linear dependence on the applied microwave power. The self-space-charge field (in volts) of a hydrogen plasma shows a saturation behavior at higher microwave powers. The maximum value at the saturation of the field equals 6.8 V at a gas pressure of 15 mbar (11.25 torr) for all values of the input microwave radiation power. The polarities of the self-space-charge electric field are similar above this value and below it

Published in:

Plasma Science, IEEE Transactions on  (Volume:20 ,  Issue: 2 )

Date of Publication:

Apr 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.