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Investigation of ErBa2Cu3O7/Cu2 O/normal metal tunnel structures

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4 Author(s)
T. P. Thorpe ; US Naval Res. Lab., Washington, DC, USA ; E. J. Cukauskas ; L. H. Allen ; M. Reeves

Tunneling studies have been made using sputtered Cu2O as an insulating barrier between an EBCO thin film and a normal metallic layer. Cu2O was selected for its low potential for chemical reaction with the superconducting layer and for its photoconductive properties. Having a band gap in the visible (2 eV), Cu2O is a suitable candidate for photosensitive tunneling experiments. EBCO thin films were deposited in situ onto MgO substrates using an off-axis sputtering technique. Tc's of as-deposited films were between 80 and 85 K. Inductively measured Jc's ranged between 106 and 107 A/cm2 at 4 K. A 5-20-nm layer of Cu2O was sputtered directly on top of the superconducting film. Room-temperature resistivities of the Cu2 O layer were typically greater than 106 Ω-cm. A normal metal layer (typically gold) was then deposited onto the Cu2 O layer. Transport properties of the structure were measured at temperatures ranging above and below the Tc of the superconducting layer. Measurements of structures fabricated to date showed no tunneling effects. Measurements of the I-V characteristic of a Cu/EBCO bilayer exhibited nonohmic behavior at 85 K and 4 K, indicating the existence of an extraneous interfacial layer. Preliminary results on one such structure indicate possible tunneling effects

Published in:

IEEE Transactions on Magnetics  (Volume:27 ,  Issue: 2 )