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Improved performance of Si-based spiral inductors

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4 Author(s)
Tung-Sheng Chen ; Dept. of Electr. Eng., Nat. Defense Univ., Taiwan, Taiwan ; Deng, J.D.-S. ; Chih-Yuan Lee ; Chin-Hsing Kao

Conventional spiral inductors on silicon wafer have suffered low quality (Q) factor due to substrate loss. In this work, a technique that combines optimized shielding poly and proton implantation treatment is utilized to improve inductor Q-value. The optimized poly-silicon and proton-bombarded substrate have added 37% and 54% increment to the Q-value of inductors, respectively. If two techniques are combined, a phenomenal Q-value increment as high as 122% of 4-nH spiral inductors can be realized. The combination of the two means has created a multiplication of their individual contribution rather than addition. The technique used in this work shall become a critical measure to put inductors on silicon substrate with satisfactory performance for Si-based radio frequency integrated circuit applications.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:14 ,  Issue: 10 )

Date of Publication:

Oct. 2004

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