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V-band harmonic injection-locked frequency divider using cross-coupled FETs

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2 Author(s)
Jinho Jeong ; Center for Millimeter-Wave Integrated Syst., Seoul Nat. Univ., South Korea ; Youngwoo Kwon

A V-band 1/2 frequency divider is developed using harmonic injection-locked oscillator. The cross-coupled field effect transistors (FETs) and low quality-factor microstrip resonator are employed as a wide-band oscillator to extend the locking bandwidth. The second harmonic of free-running oscillation signal is injected to the gates of cross-coupled FETs for high-sensitivity superharmonic injection locking. The fabricated microwave monolithic integrated circuit frequency divider using 0.15-μm GaAs pHEMT process showed a maximum locking range of 7.4 GHz (from 65.1 to 72.5 GHz) under a low power dissipation of 100 mW. The maximum single-ended output power was as high as -3 dBm.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:14 ,  Issue: 10 )