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Size effects in electrical behavior of high-Tc thin-film bridges

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3 Author(s)
Afanasyev, A.S. ; Inst. of Radioeng. & Electron., Acad. of Sci., Moscow, USSR ; Gubankov, V.N. ; Divin, Yu.Ya.

The size effects in electrical characteristics of polycrystalline YBa2Cu3O7-x thin-film bridges were studied in the temperature range 4-300 K. It is shown that at T>Tc the decrease of bridge widths w from 200 to 10 μm leads to an increase of resistance R of several times and to a change in R (T) behavior from a metallic type to an activation type. At T<Tc the R (w ) values exponentially increased from the width w was decreased under some definite size L0. At T<Tc the index α in the temperature dependence of critical current Ic(T )~(Tc-T)α changed from 3 to 1 if bridge width was decreased. Experimental data are discussed within the framework of the model which takes into account large-scale percolation processes in the system of different intergrain Josephson junctions, where characteristic length L0 of critical subnetwork is much larger than the grain size

Published in:

Magnetics, IEEE Transactions on  (Volume:27 ,  Issue: 2 )

Date of Publication:

Mar 1991

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