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Fabrication of all-NbN Josephson tunnel junctions using single crystal NbN films for the base electrodes

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1 Author(s)
A. Shoji ; Electrotech. Lab., Ibaraki, Japan

All-NbN Josephson tunnel junctions with sputter-deposited magnesium oxide barriers have been fabricated using single-crystal NbN films for the base electrodes. Fabricated Josephson junctions have shown good tunneling characteristics with large gap voltages (5.6-5.8 mV), narrow gap widths (0.1-0.2 mV, from 30 to 70%), and small subgap leakage currents (Vm=20-30 mV, measured at 3 mV). The results of a measurement of a subgap structure for a fabricated junction suggest that the excess leakage currents of fabricated junctions are due to multiparticle tunneling through locally thin areas in the MgO barriers

Published in:

IEEE Transactions on Magnetics  (Volume:27 ,  Issue: 2 )