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Fabrication of sub-micron whole-wafer SIS tunnel junctions for millimeter wave mixers

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5 Author(s)

As part of a program for the development of a space-qualified submillimeter-wave mixer operating in the region of one terahertz, the authors have developed processes for the fabrication of submicron whole-wafer tunnel junctions. Using the self-aligned whole-wafer process (SAWW) with electron beam lithography they have been able to reliably fabricate high-quality (Vm>20 mV) submicron tunnel junctions from whole-wafer Nb/AlOx/Nb structures. In particular, it is shown that the junction quality is independent of size down to 0.3 μm2 junction area. The problems of film stress, anodization, registration for electron beam lithography, and lift-off, which limit the yield of good quality submicron-scale junctions are addressed

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Magnetics, IEEE Transactions on  (Volume:27 ,  Issue: 2 )