Referenced Items are not available for this document.
In this paper, we describe a self-aligned process to produce short-channel vertical power DMOSFETs in 4H-SiC. By reducing the channel length to ≤0.5 μm, the specific on-resistance of the MOSFET channel is proportionally reduced, significantly enhancing performance.
Published in:
Electron Devices, IEEE Transactions on
(Volume:51
,
Issue:
10
)
Date of Publication: Oct. 2004
- Page(s):
- 1721 - 1725
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 8155315
- Digital Object Identifier :
- 10.1109/TED.2004.835622
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 27 September 2004
- Issue Date :
- Oct. 2004
- Sponsored by :
- IEEE Electron Devices Society
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