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The new CoolMOS C3 generation combines extremely high on-state conductivity with ultrafast switching speed at full pulse current capability. In the first generation of CoolMOS the saturation current was intentionally reduced at the cell level for the benefit of short-circuit ruggedness. This technique results in a reduced current capability of the device at low gate voltages, which has been overcome today by the C3 family. In some applications the outstanding switching performance of the CoolMOS cannot be utilized due to the dynamic behavior of the diode. For this reason a whole family of SiC diodes has been developed to attain the ideal matched pair of switch and ultrafast diodes. The goal of ultralow-loss applications in switched mode power supplies, power factor correction circuits, and motor control units will be achieved perfectly.