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Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology

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6 Author(s)
W. Perndl ; Infineon Technol. AG, Munich, Germany ; H. Knapp ; K. Aufinger ; T. F. Meister
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In this paper, two fully integrated voltage-controlled oscillators (VCOs) in a 200-GHz fT SiGe bipolar technology are presented. The oscillators use on-chip transmission lines at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -85dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 to 98.4 GHz and it consumes 12 mA from a single -5-V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -87dBc/Hz at 1-MHz offset frequency. The output power of both circuits is about -6dBm.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:39 ,  Issue: 10 )