By Topic

Quality improvement of ultrathin gate oxide by using thermal growth followed by SF ANO technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yi-Lin Yang ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Hwu, Jenn-Gwo

Rapid thermal oxide followed by anodization in direct current superimposed with scanning frequency alternating current was demonstrated for the first time to have an improved quality in ultrathin gate oxides. Compared with the thermal oxide grown without the scanning-frequency anodization (SF ANO) treatment, the gate leakage current density (Jg) of SF ANO sample is significantly reduced without increasing the thickness of gate oxide. In addition, it could be observed that the interface trap density (Dit) is reduced with tighter distribution. It is suggested that the bulk traps and interface traps in thermally grown oxide can be repaired during the SF ANO process.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 10 )