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InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz

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5 Author(s)
Griffith, Z. ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Youngmin Kim ; Dahlstrom, M. ; Gossard, A.C.
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InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBTs) were grown on a GaAs substrate using a metamorphic buffer layer and then fabricated. The metamorphic buffer layer is InP - employed because of its high thermal conductivity to minimize device heating. An fτ and fmax of 268 and 339 GHz were measured, respectively - both records for metamorphic DHBTs. A 70-nm SiO2 dielectric sidewall was deposited on the emitter contact to permit a longer InP emitter wet etch for increased device yield and reduced base leakage current. The dc current gain β is ≈35 and VBR,CEO=5.7 V. The collector leakage current Icbo is 90 pA at Vcb=0.3 V. These values of fτ, fmax, Icbo, and β are consistent with InP based DHBTs of the same layer structure grown on a lattice-matched InP substrate.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 10 )