Cart (Loading....) | Create Account
Close category search window
 

InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Griffith, Z. ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Youngmin Kim ; Dahlstrom, M. ; Gossard, A.C.
more authors

InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBTs) were grown on a GaAs substrate using a metamorphic buffer layer and then fabricated. The metamorphic buffer layer is InP - employed because of its high thermal conductivity to minimize device heating. An fτ and fmax of 268 and 339 GHz were measured, respectively - both records for metamorphic DHBTs. A 70-nm SiO2 dielectric sidewall was deposited on the emitter contact to permit a longer InP emitter wet etch for increased device yield and reduced base leakage current. The dc current gain β is ≈35 and VBR,CEO=5.7 V. The collector leakage current Icbo is 90 pA at Vcb=0.3 V. These values of fτ, fmax, Icbo, and β are consistent with InP based DHBTs of the same layer structure grown on a lattice-matched InP substrate.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 10 )

Date of Publication:

Oct. 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.