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Electrically pumped buried tunnel junction InGaAlAs-InP vertical-cavity surface-emitting lasers (VCSELs) with self-adjusted lateral current and optical confinement and record emission wavelengths beyond 2 μm are presented. Front and back side mirrors are realized using 31.5 epitaxial layer pairs of alternating InGaAs-InAlAs and a dielectric 2.5 pair CaF2-a-Si layer stack. The devices show single-mode continuous-wave operation up to heat sink temperatures over 80/spl deg/C. The maximum output power at 20/spl deg/C reaches 0.43 mW, threshold current and voltage are as low as 0.66 mA and 0.73 V, respectively. To reach the long emission wavelength, we use an optimized active region comprising heavily strained quantum wells. High-resolution X-ray diffraction and photoluminescence measurements reveal excellent material quality without relaxation in the quantum wells.