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The stability of high-power AlGaN/GaN HEMTs under DC and RF stresses was evaluated. For 50 hours of DC stresses, 100 μm devices exhibited ∼3% full-channel drain current degradation within the first few minutes and another ∼1% current loss during the rest of the stress period. In response to the RF stresses under pulsed conditions at 2.8 GHz, the output power of 1.5 mm devices degraded by ∼13% after 108 hours of stress. Current DLTS measurements revealed the creation of a 0.4 eV trap from the stressed and aged devices.