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High-performance 1.5 μm GaInNAsSb lasers grown on GaAs

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6 Author(s)
Bank, S.R. ; Solid State & Photonics Lab, Stanford Univ., CA, USA ; Wistey, M.A. ; Goddard, L.L. ; Yuen, H.B.
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Substantially reduced threshold current density and improved efficiency in long-wavelength (>1.4 μm) GaAs-based lasers are reported. A 20×1220 μm as-cleaved device showed a room temperature continuous-wave threshold current density of 580 A/cm2, external efficiency of 53%, and 200 mW peak output power at 1.5 μm. The pulsed threshold current density was 450 A/cm2 with 1145 mW peak output power.

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Electronics Letters  (Volume:40 ,  Issue: 19 )