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An Sb-based quantum-dot vertical-cavity surface-emitting laser (QD-VCSEL) operating in the 1.3 μm optical communication waveband is presented. A QD-VCSEL containing high-density InGaSb QDs in the active region is fabricated on GaAs substrate. The density of InGaSb QDs is drastically increased using a new method of an Si atom irradiation technique. A long-wavelength laser emission at 1.34 μm is successfully achieved on the InGaSb QD-VCSEL in CW operation at room temperature.