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Over 1.3 μm CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate

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4 Author(s)
Yamamoto, N. ; Basic & Adv. Res. Dept., Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan ; Akahane, K. ; Gozu, S. ; Ohtani, N.

An Sb-based quantum-dot vertical-cavity surface-emitting laser (QD-VCSEL) operating in the 1.3 μm optical communication waveband is presented. A QD-VCSEL containing high-density InGaSb QDs in the active region is fabricated on GaAs substrate. The density of InGaSb QDs is drastically increased using a new method of an Si atom irradiation technique. A long-wavelength laser emission at 1.34 μm is successfully achieved on the InGaSb QD-VCSEL in CW operation at room temperature.

Published in:

Electronics Letters  (Volume:40 ,  Issue: 18 )