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Selective epitaxial growth of YBaCuO thin films and its application to MOSFET fabrication

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7 Author(s)
Hashiguchi, S. ; Sumitomo Cement Co. Ltd., Japan ; Min, E. ; Awaji, T. ; Asano, K.
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The feasibility of selective (001)-Y1Ba2Cu 3Oy epitaxy is examined. The selective growth of epitaxial Y1Ba2Cu3Oy and heteroepitaxial (100)-MgO/(001)-Y1Ba2Cu3Oy layers through the SiO window was obtained. For defining the epitaxial growth region, the partial coating of the MgO substrate with the reactive SiO was used. The Y1Ba2Cu3O y deposited through the SiO window grew epitaxially; the film formed directly on the SiO layer was semitransparent, electrically insulating, and amorphous. MOS capacitors and MOSFETs were fabricated in the same way

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Magnetics, IEEE Transactions on  (Volume:27 ,  Issue: 2 )