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Ultra-low voltage circuits and processor in 180nm to 90nm technologies with a swapped-body biasing technique

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14 Author(s)
Narendra, S. ; Intel Corp., Hillsboro, OR, USA ; Tschanz, J. ; Hofsheier, J. ; Bloechel, B.
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A low-voltage swapped-body biasing technique where PMOS bodies are connected to ground and NMOS bodies to Vcc is evaluated. Available measurements show more than 2.6x frequency improvement at 0.5V Vcc and the ability to reduce Vcc by 0.2V for the same frequency compared to no body bias in 180 to 90nm CMOS technologies.

Published in:

Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International

Date of Conference:

15-19 Feb. 2004